DocumentCode :
80206
Title :
Performing Stateful Logic on Memristor Memory
Author :
Xuan Zhu ; Xuejun Yang ; Chunqing Wu ; Nong Xiao ; Junjie Wu ; Xun Yi
Author_Institution :
State Key Lab. of High Performance Comput., Nat. Univ. of Defense Technol., Changsha, China
Volume :
60
Issue :
10
fYear :
2013
fDate :
Oct. 2013
Firstpage :
682
Lastpage :
686
Abstract :
This brief proposes a circuit structure that performs a stateful logic operation on memristor memory based on a nanocrossbar. Through analysis and comparison of multiple schemes, achievable circuit condition is demonstrated, and the feasibility of the duplication operation is proved. The proposed circuit structure provides the memory with the function of in situ logic operation and thus can potentially reduce the amount of memory accessing actions and provide a possible solution to the memory wall problem.
Keywords :
integrated memory circuits; memristors; circuit structure; duplication operation; in situ logic operation; memory wall problem; memristor memory; nanocrossbar; stateful logic operation; Integrated circuit modeling; Materials; Mathematical model; Memory management; Memristors; Threshold voltage; Duplication; memory wall; memristor; nanocrossbar memory; stateful logic;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2013.2273837
Filename :
6578090
Link To Document :
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