DocumentCode :
802187
Title :
Etching of sub-0.5 μm W/WSix bilayer gates
Author :
Shul, R.J. ; Sherwin, M.E. ; Baca, A.G. ; Rieger, D.J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
32
Issue :
1
fYear :
1996
fDate :
1/4/1996 12:00:00 AM
Firstpage :
70
Lastpage :
71
Abstract :
Using electron-beam lithography, 0.3-2.0 μm W/WSix gates were fabricated in a reactive ion etch (RIE) system using a SF6/Ar plasma. W/WSix gate sidewall profiles and etch rates were evaluated against plasma chemistry, RF-power, and pressure
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron beam lithography; gallium arsenide; semiconductor device metallisation; sputter etching; tungsten; tungsten compounds; 0.3 to 2.0 micron; Ar; MESFETs; RF power; SF6; SF6-Ar; W-WSi-GaAs; anisotropic etching; electron-beam lithography; etch rates; gate profile; plasma chemistry; pressure; reactive ion etch; sidewall profiles;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960048
Filename :
490737
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=802187
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