• DocumentCode
    802203
  • Title

    High frequency Pnp AlGaAs/InGaAs heterojunction bipolar transistor with an ultrathin strained base

  • Author

    Hill, D. ; Costa, David ; Harris, J.S.

  • Volume
    26
  • Issue
    24
  • fYear
    1990
  • Firstpage
    2000
  • Lastpage
    2002
  • Abstract
    High performance Pnp AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) have been fabricated. The transistors have a 300 AA strained InGaAs base, with indium composition linearly graded from 0 to 15%. The cutoff frequency, and maximum oscillation frequency for a transistor with emitter area of 2*8 mu m2 are measured to be 23.3 GHz and 40 GHz, respectively, at a collector current of -10 mA.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; -10 mA; 23.3 GHz; 40 GHz; AlGaAs-InGaAs; Gummel plot; InGaAs:Si; Pnp transistors; collector current; cutoff frequency; heterojunction bipolar transistor; maximum oscillation frequency; ultrathin strained base;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901293
  • Filename
    102581
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=802203