Title :
High frequency Pnp AlGaAs/InGaAs heterojunction bipolar transistor with an ultrathin strained base
Author :
Hill, D. ; Costa, David ; Harris, J.S.
Abstract :
High performance Pnp AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) have been fabricated. The transistors have a 300 AA strained InGaAs base, with indium composition linearly graded from 0 to 15%. The cutoff frequency, and maximum oscillation frequency for a transistor with emitter area of 2*8 mu m2 are measured to be 23.3 GHz and 40 GHz, respectively, at a collector current of -10 mA.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; -10 mA; 23.3 GHz; 40 GHz; AlGaAs-InGaAs; Gummel plot; InGaAs:Si; Pnp transistors; collector current; cutoff frequency; heterojunction bipolar transistor; maximum oscillation frequency; ultrathin strained base;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901293
