Title :
p-diamond/n-GaAs junctions formed by direct bonding
Author :
Sugino, T. ; Itagaki, T. ; Shirafuji, J.
Author_Institution :
Dept. of Electr. Eng., Osaka Univ., Japan
fDate :
1/4/1996 12:00:00 AM
Abstract :
The direct bonding of an n-GaAs thin film onto the surface of epitaxial p-diamond is demonstrated. A rectifying characteristic is obtained for the present p-diamond/n-GaAs bonded junction system. Moreover, the occurrence of the photovoltaic effect at the junction is observed under illumination by an AlGaAs laser operated at 789 nm. A diamond/GaAs pn junction can be formed by direct bonding
Keywords :
III-V semiconductors; characteristics measurement; diamond; elemental semiconductors; gallium arsenide; p-n heterojunctions; photovoltaic effects; semiconductor epitaxial layers; semiconductor thin films; solid-state rectifiers; 789 nm; C-GaAs; I-V characteristic; bonded junction system; direct bonding; p-n heterostructures; photovoltaic effect; rectifying characteristic;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960018
