Title :
5 V, DC-12 GHz InP/InGaAs HBT amplifier
Author :
Nottenburg, R.N. ; Banu, Mihai ; Jalali, Bahram ; Humphrey, D.A. ; Montgomery, R.K. ; Hamm, R.A. ; Panish, M.B.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
An InP/InGaAs HBT cascode amplifier operating from a single 5 V power supply is described. The circuit has a DC gain of 17.2 dB and a -3 dB frequency point of 12.3 GHz. This results in a gain-bandwidth product in excess of 90 GHz. The frequency response of the amplifier remains constant if the power supply voltage is as low as 4 V.
Keywords :
III-V semiconductors; MMIC; amplifiers; bipolar integrated circuits; frequency response; gallium arsenide; heterojunction bipolar transistors; indium compounds; linear integrated circuits; 12.3 GHz; 17.2 dB; 5 V; HBT amplifier; InP-InGaAs; cascode amplifier; frequency response; gain-bandwidth product; power supply voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901303
