High-Sensitivity and Fast-Response Graphene/Crystalline Silicon Schottky Junction-Based Near-IR Photodetectors

Author

Peng Lv ; Xiujuan Zhang ; Xiwei Zhang ; Wei Deng ; Jiansheng Jie

Author_Institution

Inst. of Functional Nano & Soft Mater., Soochow Univ., Suzhou, China

Volume

34

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

1337

Lastpage

1339

Abstract

Schottky junction near-infrared photodetectors were constructed by combing monolayer graphene (MLG) film and bulk silicon. Notably, the device could operate at zero external voltage bias because of the strong photovoltaic behavior of the MLG/Si Schottky junction, giving rise to high responsivity and detectivity of 29 mAW^-1 and 3.9×10¹¹ cmHz^1/2W^-1, respectively, at room temperature. Time response measurement revealed a high response speed of 100 μs, which allowed the device following a fast varied light with frequency up to 2100 Hz. In addition, the device showed great potential for low light detection with intensity at 10 K.

Keywords

Schottky barriers; elemental semiconductors; graphene; photodetectors; silicon; Schottky junction near-IR photodetectors; frequency 2100 Hz; graphene/crystalline silicon; low light detection; monolayer graphene film; temperature 10 K; time 100 mus; Graphene; Junctions; Photoconductivity; Photodetectors; Silicon; Substrates; Temperature measurement; Graphene; Schottky junction; near-infrared (NIR); photodetectors; planar Si;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2275169

Filename

6578093