Title :
Terahertz electromagnetic generation via optical frequency difference
Author :
Peytavit, E. ; Mouret, G. ; Lampin, J.F. ; Arscott, S. ; Masselin, P. ; Desplanque, L. ; Vanbesien, O. ; Bocquet, R. ; Mollot, F. ; Lippens, D.
Author_Institution :
Inst. d´´Electronique et de Microelectronique du Nord, Lille I Univ., Villeneuve d´´Ascq, France
fDate :
6/1/2002 12:00:00 AM
Abstract :
Electromagnetic generation between 0.1 and 3 terahertz has been demonstrated using ultrafast photodetectors loaded by broadband antennas and pumped by 0.8 μm stable lasers. Ultrashort response times have been achieved by means of low-temperature-grown (LTG) GaAs in a deep submicron interdigited technology. The 3 dB cutoff frequency is around 650 GHz with an expected output power of the order of a few tenths of a microwatt in the lower part of the spectrum, depending on the thermal post-processing conditions. Possible improvements via long wavelength laser pumping and a Fabry-Perot cavity-like approach are discussed on the basis of a vertical device scheme
Keywords :
Fabry-Perot resonators; III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; infrared detectors; optical pulse generation; optical pumping; submillimetre wave generation; 0.1 to 3 THz; 650 GHz; Fabry-Perot cavity-like approach; GaAs; broadband antennas; cutoff frequency; deep submicron interdigited technology; long wavelength laser pumping; low-temperature-grown GaAs; optical frequency difference; output power; post-processing conditions; stable lasers; terahertz electromagnetic generation; ultrafast photodetectors; ultrashort response times; vertical device scheme;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20020321
