Title :
Be-doped low-temperature-grown GaAs material for optoelectronic switches
Author :
Krotkus, A. ; Bertulis, K. ; Kaminska, M. ; Korona, K. ; Wolos, A. ; Siegert, Joerg ; Marcinkevicius, S. ; Coutaz, Jean-Louis
Author_Institution :
Semicond. Phys. Inst., Vilnius
fDate :
6/1/2002 12:00:00 AM
Abstract :
Structural, electrical and recombination properties of Be-doped low-temperature MBE grown (LTG) GaAs have been investigated by using a number of different experimental techniques. These properties were analysed with respect to the applications of LTG GaAs in ultrafast optoelectronic devices. It has been found that a moderate Be-doping improves the structural quality of the layers and does not affect their semi-insulating behaviour. Electron and hole capture cross-sections, critical parameters for the design of optoelectronic devices from LTG GaAs, equal to σn=1.1×10-13 and σp=1.8×10-15 cm2 were also determined
Keywords :
beryllium; carrier mobility; gallium arsenide; molecular beam epitaxial growth; optical switches; optoelectronic devices; semiconductor doping; transmission electron microscopy; Be-doped low-temperature-grown GaAs material; GaAs:Be; electrical properties; electron capture cross-sections; hole capture cross-sections; low-temperature MBE grown; moderate Be-doping; optoelectronic devices; optoelectronic switches; recombination properties; semi-insulating behaviour; structural properties; structural quality; ultrafast optoelectronic devices;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20020435
