Title :
Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure lasers with nonabsorbing mirrors by selective-area MOCVD
Author :
Lammert, R.M. ; Smith, G.M. ; Forbes, D.V. ; Osowski, M.L. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
fDate :
6/22/1995 12:00:00 AM
Abstract :
Design, fabrication, and operation of strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure (BH) lasers with nonabsorbing mirrors fabricated by selective-area epitaxy (SAE) are presented. The SAE-BH lasers with nonabsorbing mirrors operate at powers up to ~325 mW/facet (4 μm wide output aperture), which is a >40% increase over conventional SAE-BH lasers
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; epitaxial growth; gallium arsenide; indium compounds; laser mirrors; optical design techniques; optical fabrication; semiconductor growth; semiconductor lasers; 325 mW; 4 mum; InGaAs-GaAs-AlGaAs; nonabsorbing mirrors; selective-area MOCVD; selective-area epitaxy; strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure lasers; wide output aperture;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950742
