High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio Links

Author

Camarchia, Vittorio ; Moreno Rubio, Jorge Julian ; Pirola, Marco ; Quaglia, R. ; Colantonio, P. ; Giannini, F. ; Giofre, R. ; Piazzon, L. ; Emanuelsson, T. ; Wegeland, T.

Author_Institution

Dept. of Electron. & Telecommun., Politec. di Torino, Turin, Italy

Volume

60

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

3592

Lastpage

3595

Abstract

The potentialities of GaN monolithic technology for the growing microwave backhaul power amplifier market are discussed in this paper. To support this discussion, two GaN monolithic Doherty power amplifiers for 7 GHz backhaul applications are presented. They exhibit 5 W output power, with almost 10 dB gain and high efficiency at 7 dB output power back-off. In particular, one module has been optimized for maximum efficiency at center frequency (47% at 7 dB output power back-off), while the other for high efficiency on a larger bandwidth (15% fractional bandwidth).

Keywords

III-V semiconductors; MMIC power amplifiers; gallium compounds; radio links; wide band gap semiconductors; GaN; Microwave Backhaul Radio Links; efficiency 15 percent; efficiency 47 percent; frequency 7 GHz; gain 10 dB; gain 7 dB; monolithic MMIC Doherty power amplifier; monolithic technology; power 5 W; Bandwidth; Gallium arsenide; Gallium nitride; Impedance; MMICs; Power amplifiers; Power generation; Backhaul; Doherty power amplifier; gallium nitride (GaN); high efficiency; monolithic microwave integrated circuit (MMIC);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2274669

Filename

6578096