Title :
High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio Links
Author :
Camarchia, Vittorio ; Moreno Rubio, Jorge Julian ; Pirola, Marco ; Quaglia, R. ; Colantonio, P. ; Giannini, F. ; Giofre, R. ; Piazzon, L. ; Emanuelsson, T. ; Wegeland, T.
Author_Institution :
Dept. of Electron. & Telecommun., Politec. di Torino, Turin, Italy
Abstract :
The potentialities of GaN monolithic technology for the growing microwave backhaul power amplifier market are discussed in this paper. To support this discussion, two GaN monolithic Doherty power amplifiers for 7 GHz backhaul applications are presented. They exhibit 5 W output power, with almost 10 dB gain and high efficiency at 7 dB output power back-off. In particular, one module has been optimized for maximum efficiency at center frequency (47% at 7 dB output power back-off), while the other for high efficiency on a larger bandwidth (15% fractional bandwidth).
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; radio links; wide band gap semiconductors; GaN; Microwave Backhaul Radio Links; efficiency 15 percent; efficiency 47 percent; frequency 7 GHz; gain 10 dB; gain 7 dB; monolithic MMIC Doherty power amplifier; monolithic technology; power 5 W; Bandwidth; Gallium arsenide; Gallium nitride; Impedance; MMICs; Power amplifiers; Power generation; Backhaul; Doherty power amplifier; gallium nitride (GaN); high efficiency; monolithic microwave integrated circuit (MMIC);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2274669
