DocumentCode
802822
Title
Crystal silicon Fabry-Perot cavities deposited with dichlorosilane in a reduced pressure chemical vapour deposition reactor for thermal sensing
Author
Chao, H.C. ; Neudeck, G.W.
Author_Institution
Nat. Dong-Hwa Univ., Hualien, Taiwan
Volume
31
Issue
13
fYear
1995
fDate
6/22/1995 12:00:00 AM
Firstpage
1101
Lastpage
1102
Abstract
A surface-normal Fabry-Perot (FP) thermal sensor with embedded multiple QW dielectric mirrors, was fabricated and evaluated using a single crystal merged silicon epitaxial lateral overgrowth (MELO) technique. The sensitivity of the sensor has been improved owing to the higher finesse
Keywords
Fabry-Perot resonators; cavity resonators; elemental semiconductors; microsensors; mirrors; optical sensors; refractive index; silicon; silicon-on-insulator; temperature sensors; thermo-optical effects; vapour phase epitaxial growth; Fabry-Perot cavities; MELO technique; Si; chemical vapour deposition; crystalline Si; dichlorosilane; embedded multiple QW dielectric mirrors; merged epitaxial lateral overgrowth; reduced pressure CVD reactor; surface-normal Fabry-Perot sensor; thermal sensing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950708
Filename
392703
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