Title :
Effect of atmospheric pressure MOCVD growth conditions on UV band-edge photoluminescence in GaN thin films
Author :
Keller, B.P. ; Keller, S. ; Kapolnek, D. ; Kato, M. ; Masui, H. ; Imagi, S. ; Mishra, U.K. ; DenBaars, Steven P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
6/22/1995 12:00:00 AM
Abstract :
Strong band-edge luminescence in GaN films grown by atmospheric pressure MOCVD is observed. The effect of the growth temperature and V/III ratio on the band-edge to deep level luminescence ratio (Ib /Id) indicates that a large supply of active nitrogen is essential for obtaining excellent optical properties. GaN grown under optimised conditions exhibits an Ib/Id ratio of 10.9 at 300 K and 1300 at 22 K
Keywords :
III-V semiconductors; gallium compounds; optical properties; photoluminescence; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 22 to 300 K; GaN; GaN thin films; UV band-edge photoluminescence; V/III ratio; active N supply; atmospheric pressure MOCVD growth conditions; band-edge to deep level luminescence ratio; growth temperature; optical properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950741
