• DocumentCode
    802847
  • Title

    Effect of atmospheric pressure MOCVD growth conditions on UV band-edge photoluminescence in GaN thin films

  • Author

    Keller, B.P. ; Keller, S. ; Kapolnek, D. ; Kato, M. ; Masui, H. ; Imagi, S. ; Mishra, U.K. ; DenBaars, Steven P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    31
  • Issue
    13
  • fYear
    1995
  • fDate
    6/22/1995 12:00:00 AM
  • Firstpage
    1102
  • Lastpage
    1103
  • Abstract
    Strong band-edge luminescence in GaN films grown by atmospheric pressure MOCVD is observed. The effect of the growth temperature and V/III ratio on the band-edge to deep level luminescence ratio (Ib /Id) indicates that a large supply of active nitrogen is essential for obtaining excellent optical properties. GaN grown under optimised conditions exhibits an Ib/Id ratio of 10.9 at 300 K and 1300 at 22 K
  • Keywords
    III-V semiconductors; gallium compounds; optical properties; photoluminescence; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 22 to 300 K; GaN; GaN thin films; UV band-edge photoluminescence; V/III ratio; active N supply; atmospheric pressure MOCVD growth conditions; band-edge to deep level luminescence ratio; growth temperature; optical properties;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950741
  • Filename
    392705
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=802847