DocumentCode
802857
Title
Enhancement of barrier height of Au/PNx/InP Schottky diodes by in situ surface treatment
Author
Sakamoto, Y. ; Sugino, T. ; Miyazaki, T. ; Shirafuji, J.
Author_Institution
Dept. of Electr. Eng., Osaka Univ., Japan
Volume
31
Issue
13
fYear
1995
fDate
6/22/1995 12:00:00 AM
Firstpage
1104
Lastpage
1105
Abstract
Au/PNx/InP Schottky junctions have been formed using sophisticated in situ multistep plasma process. An effective barrier height as high as 0.83 eV has been achieved for Au/PNx/InP Schottky diodes. The true barrier height estimated from the Richardson plot was 0.57 eV. This suggests that the surface Fermi level pinned at 0.39 eV below the conduction band edge for conventionally prepared Au/InP Schottky junctions is weakened in plasma-treated Au/PNx/InP Schottky junctions. The effective barrier is enhanced by the effects of both the metal-insulator-semiconductor structure and weakened pinning of the surface Fermi level
Keywords
Fermi level; MIS devices; Schottky diodes; annealing; gold; indium compounds; passivation; phosphorus compounds; plasma CVD; surface states; surface treatment; thermal stability; 0.57 to 0.83 eV; Au-PN-InP; Au/PNx/InP Schottky diodes; MIS diode; Schottky junction formation; barrier height enhancement; conduction band edge; in situ surface treatment; metal-insulator-semiconductor structure; surface Fermi level;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950756
Filename
392707
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