• DocumentCode
    802871
  • Title

    In0.52(Al0.9Ga0.1)0.48 As/In0.53Ga0.47As HEMT with improved device reliability

  • Author

    Wu, C.S. ; Chan, Y.-J. ; Shien, J.-L. ; Chyi, J.-I.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
  • Volume
    31
  • Issue
    13
  • fYear
    1995
  • fDate
    6/22/1995 12:00:00 AM
  • Firstpage
    1105
  • Lastpage
    1106
  • Abstract
    A novel In0.52(Al0.9Ga0.1)0.48As/In 0.53Ga0.477As HEMT on InP substrate is proposed and fabricated. By adding 10% Ga to the InAlAs layer, the quality of this quaternary InAlGaAs can be improved. This HEMT demonstrated a peak gm, of 295 mS/mm, an fT of 35 GHz, and an fmax of 76 GHz with a gate length of 0.8 μm. Furthermore. After 36 h of biasing stress, almost no change in drain current and transconductance was observed in the InAlGaAs HEMT. Which is a better result than obtainable in conventional InP HEMTs
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device reliability; 0.8 micron; 295 mS/mm; 35 GHz; 76 GHz; In0.52(Al0.9Ga0.1)0.48 As/In0.53Ga0.47As HEMT; InAlAs layer; InAlGaAs-InGaAs; InP; InP substrate; biasing stress; device reliability; drain current; quaternary InAlGaAs; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950728
  • Filename
    392708
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=802871