• DocumentCode
    802883
  • Title

    Low resistance (~10-6 Ω cm2) ohmic contact to n-GaAs processed at 175°C

  • Author

    Hao, P.H. ; Wang, L.C. ; Wu, B.J.

  • Author_Institution
    Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
  • Volume
    31
  • Issue
    13
  • fYear
    1995
  • fDate
    6/22/1995 12:00:00 AM
  • Firstpage
    1106
  • Lastpage
    1108
  • Abstract
    A low resistance (10-6 Ω cm2) Au/Ge/Pd ohmic contact processed at 175°C has been developed to n-GaAs (n≃1018 cm-3). The ohmic contact formation mechanism can be rationalised in terms or the solid phase regrowth (SPR) principle and the interdiffusion of Au and Ge
  • Keywords
    III-V semiconductors; annealing; chemical interdiffusion; contact resistance; gallium arsenide; germanium; gold; ohmic contacts; palladium; semiconductor-metal boundaries; 175 C; Au-Ge-Pd-GaAs; contact formation mechanism; interdiffusion; low resistance contact; n-GaAs; n-type; ohmic contact; solid phase regrowth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950704
  • Filename
    392709
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=802883