DocumentCode
802928
Title
Comparing Radiation Effects in Gunn and Impatt Diodes
Author
Anderson, Wayne A.
Author_Institution
Rutgers University New Brunswick, New Jersey
Volume
18
Issue
4
fYear
1971
Firstpage
404
Lastpage
409
Abstract
Several Gunn and IMPATT diodes were subjected to neutron and gamma radiation while in oscillation. This provided data which could not be obtained by diode testing after irradiation. Non-passivated IMPATT diodes were most tolerant of neutron fluence effects. Gunn diodes were insignificantly influenced by this radiation flux but failed at lower fluence levels than did the IMPATT diodes.
Keywords
Charge carrier lifetime; Diodes; Gallium arsenide; Gunn devices; Microwave circuits; Microwave devices; Neutrons; Radiation effects; Silicon; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1971.4326375
Filename
4326375
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