DocumentCode
802945
Title
High-efficiency AlGaAs/InGaAs heterostructure FET oscillators at V-band
Author
Tsering, H.Q. ; Saunier, P.
Author_Institution
Central Res. Lab., Texas Inst. Inc., Dallas, TX, USA
Volume
26
Issue
24
fYear
1990
Firstpage
2048
Lastpage
2049
Abstract
Quarter micron gate length heterostructure FETs used as oscillators have achieved record DC to RF conversion efficiencies at V-band. Devices with gatewidths of 50 mu m achieved an efficiency as high as 27% with output powers up to 20 mW in the 54 to 66 GHz frequency range.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; insulated gate field effect transistors; microwave oscillators; solid-state microwave devices; 20 mW; 27 percent; 50 micron; AlGaAs-InGaAs; DC to RF conversion efficiencies; EHF; MM-wave devices; V-band; gatewidths; heterostructure FET; high efficiency operation; millimetre wave oscillator; oscillators; quarter micron gate length; submicron gate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901320
Filename
102608
Link To Document