DocumentCode :
802982
Title :
Power ICs in the saddle
Author :
Baliga, B. Jayant
Author_Institution :
North Carolina State Univ., Raleigh, NC
Volume :
32
Issue :
7
fYear :
1995
fDate :
7/1/1995 12:00:00 AM
Firstpage :
34
Abstract :
Improving the voltage, current, and switching capabilities of power electronics devices makes for more efficient control of power and energy. Interface with microprocessors for protection from unfriendly environments is also an asset. The author discusses the development of power electronic devices using MOSFETs, insulated gate transistors, and MOS controlled thyristors. The future of SiC based devices is also discussed
Keywords :
MOS-controlled thyristors; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power integrated circuits; MOS controlled thyristors; MOSFET; SiC based devices; energy control; insulated gate transistors; microprocessors; power IC; power control; power electronics devices; protection; switching capabilities improvement; Analog circuits; CMOS analog integrated circuits; CMOS logic circuits; CMOS technology; Feedback circuits; Load flow; Power integrated circuits; Protection; Temperature; Very large scale integration;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/6.392802
Filename :
392802
Link To Document :
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