• DocumentCode
    803225
  • Title

    Charge-State Effects in Displacement Damage Invited Paper

  • Author

    Corbett, J.W. ; Bourgoin, J.C.

  • Author_Institution
    Physics Department Suny/Albany Albany, New York 12203
  • Volume
    18
  • Issue
    6
  • fYear
    1971
  • Firstpage
    11
  • Lastpage
    20
  • Abstract
    Charge-state effects in displacement damage in covalent semiconductors are reviewed. Specifically the influence on defect production mechanisms, configurations, mobility, annealing kinetics, interaction and dissociation are discussed. The recent theoretical work on the split-interstitial is mentioned, as is the new athermal migration mechanism.
  • Keywords
    Annealing; Contracts; Impurities; Kinetic theory; Laboratories; Lattices; Physics; Production; Semiconductor materials; Space charge;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1971.4326408
  • Filename
    4326408
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=803225