DocumentCode
803259
Title
Radiation-Induced Laser Action in CdSe
Author
Arora, B.M. ; Ahlburn, B.T. ; Compton, W.D.
Volume
18
Issue
6
fYear
1971
Firstpage
40
Lastpage
44
Abstract
Laser emission of CdSe excited by Ga(AsP) laser diode has been studied near liquid helium temperature both before and after irradiation with fast neutrons. Irradiation introduces new laser peaks at ~6895Ã…, ~690Ã…, and ~6924Ã…, which are situated at longer wavelengths as compared to the peaks observed before irradiation. The laser peak at ~6905Ã… can be associated with the strong spontaneous emission that is observed at the same wavelength after irradiation. These results are interpreted in terms of the recombination of excitons bound to the defects introduced by irradiation.
Keywords
Diode lasers; Excitons; Helium; Laser excitation; Neutrons; Optical resonators; Radiative recombination; Spontaneous emission; Stimulated emission; Temperature;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1971.4326411
Filename
4326411
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