Substrate Majority Carrier-Induced NLDMOSFET Failure and Its Prevention in Advanced Smart Power IC Technologies

Author

Zhu, Ronghua ; Khemka, Vishnu ; Bose, Amitava ; Roggenbauer, Todd

Author_Institution

Freescale Semicond. Inc, Tempe, AZ

Volume

6

Issue

3

fYear

2006

Firstpage

386

Lastpage

392

Abstract

This paper discusses substrate majority carrier conduction and prevention for an n-type lateral double diffused MOSFET (NLDMOSFET) device in Smart Power IC technologies. Substrate majority carrier current poses severe electrical and thermal stress for NLDMOSFET devices and causes many system integration issues for advanced Smart Power IC technologies. A single- and multi-iso isolated NLDMOSFET is proposed and experimentally verified to eliminate the problem. Tradeoff between device size, safe operating area (SOA), substrate current, and NLDMOSFET-device power dissipation has been studied. Detailed analysis of device SOA for conventional and isolated devices and techniques to improve the device SOA has also been provided

Keywords

MOSFET; failure analysis; power integrated circuits; semiconductor device reliability; NLDMOSFET failure; device size; double reduced surface field; electrical stress; n-type lateral double diffused MOSFET; safe operating area; smart power IC technologies; substrate current; substrate majority carrier conduction; thermal stress; DC motors; Hydrogen; MOSFET circuits; Power MOSFET; Power integrated circuits; Pulse width modulation; Semiconductor optical amplifiers; Substrates; Thermal stresses; Voltage; Double reduced surface field (RESURF); RESURF; Smart Power IC; n-type lateral double diffused MOSFET (NLDMOSFET); safe operating area (SOA); single RESURF; substrate conduction;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2006.882198

Filename

1717487