Title :
New fabrication technology for long-wavelength receiver OEICs
Author :
Spear, D.A.H. ; Dawe, P.J.G. ; Antell, G.R. ; Lee, Woo Seung ; Bland, S.W.
Author_Institution :
STC Technol. Ltd., Harlow, UK
Abstract :
A novel quasiplanar process for the fabrication of GaInAs/InP receiver OEICs is reported. This is based on a single-step MOVPE growth, allowing independent optimisation of both optical and electronic components. A monolithic receiver front-end comprising pin photodiode, load resistor and inverter amplifier fabricated using this technology shows a sensitivity of -32.7 dBm at 560 Mbit/s and 1.3 mu m wavelength.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; optical communication equipment; receivers; semiconductor technology; 1.3 micron; 560 Mbit/s; GaInAs-InP optoelectronic receivers; OEICs; fabrication technology; independent optimisation; inverter amplifier; load resistor; long-wavelength receiver; monolithic receiver front-end; pin photodiode; quasiplanar process; semiconductors; sensitivity; single-step MOVPE growth; wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890113
