Title :
Electronic Recovery from Radiation Effects in CMNOS Structures
Author :
Cricchi, J.R. ; Barbe, D.F.
Author_Institution :
Westinghouse Electric Corporation Defense and Space Center Baltimore, Maryland 21203
Abstract :
We consider the effects of ionizing radiation on Complementary Metal-Nitride-Oxide-Silicon structures for oxide thicknesses in the range of 20-50Ã…. The bi-directional radiation-induced threshold-voltage shifts in CMNOS structures are interpreted in terms of charge accumulation at the nitride-oxide interface. The electronic recovery of pre-irradiation threshold voltage levels by carrier transport through the thin oxide is shown experimentally.
Keywords :
Bidirectional control; Inductors; Integrated circuit measurements; Ionizing radiation; MOS capacitors; Nitrogen; Radiation effects; Silicon; Thickness measurement; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1971.4326423
