• DocumentCode
    80345
  • Title

    Status and Potential of CdTe Solar-Cell Efficiency

  • Author

    Geisthardt, Russell M. ; Topic, Marko ; Sites, James R.

  • Author_Institution
    Colorado State Univ., Fort Collins, CO, USA
  • Volume
    5
  • Issue
    4
  • fYear
    2015
  • fDate
    Jul-15
  • Firstpage
    1217
  • Lastpage
    1221
  • Abstract
    The status of the highest efficiency CdTe solar cells is presented in the context of comparative loss analysis among the leading technologies for single- and polycrystalline photovoltaic materials. The Shockley-Queisser limit of a single-junction cell, with acknowledgement of variations from standard conditions, is used for reference. The highest CdTe currents achieved are comparable with the best single-crystal cells and superior to other thin-film cells. Voltages match those of multicrystalline Si, but lag behind those of CIGS and crystalline Si, and considerably lag behind crystalline GaAs. The potential for still higher CdTe efficiency will likely require a combination of reduced bulk recombination, smaller back-contact barriers, device structures with advantageous internal fields, and transparent emitters with minimal band offsets.
  • Keywords
    II-VI semiconductors; cadmium compounds; solar cells; wide band gap semiconductors; CdTe; CdTe solar-cell efficiency; Shockley-Queisser limit; back-contact barriers; band offsets; bulk recombination; internal fields; loss analysis; polycrystalline photovoltaic materials; single-crystalline photovoltaic materials; single-junction cell; transparent emitters; Limiting; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Silicon; Standards; Cadmium compounds; conversion efficiency; solar cell;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2015.2434594
  • Filename
    7114196