DocumentCode :
80345
Title :
Status and Potential of CdTe Solar-Cell Efficiency
Author :
Geisthardt, Russell M. ; Topic, Marko ; Sites, James R.
Author_Institution :
Colorado State Univ., Fort Collins, CO, USA
Volume :
5
Issue :
4
fYear :
2015
fDate :
Jul-15
Firstpage :
1217
Lastpage :
1221
Abstract :
The status of the highest efficiency CdTe solar cells is presented in the context of comparative loss analysis among the leading technologies for single- and polycrystalline photovoltaic materials. The Shockley-Queisser limit of a single-junction cell, with acknowledgement of variations from standard conditions, is used for reference. The highest CdTe currents achieved are comparable with the best single-crystal cells and superior to other thin-film cells. Voltages match those of multicrystalline Si, but lag behind those of CIGS and crystalline Si, and considerably lag behind crystalline GaAs. The potential for still higher CdTe efficiency will likely require a combination of reduced bulk recombination, smaller back-contact barriers, device structures with advantageous internal fields, and transparent emitters with minimal band offsets.
Keywords :
II-VI semiconductors; cadmium compounds; solar cells; wide band gap semiconductors; CdTe; CdTe solar-cell efficiency; Shockley-Queisser limit; back-contact barriers; band offsets; bulk recombination; internal fields; loss analysis; polycrystalline photovoltaic materials; single-crystalline photovoltaic materials; single-junction cell; transparent emitters; Limiting; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Silicon; Standards; Cadmium compounds; conversion efficiency; solar cell;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2015.2434594
Filename :
7114196
Link To Document :
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