Device Characterization for Computer Analysis of Large Circuits

This paper describes how systematic selection of transistor models can be incorporated into the computer simulation of circuit behavior. The selection is so done that each model chosen provides the best accuracy-simplicity compromise for the circuit environment in which each transistor resides. Compared with other procedures now available, the method described here simplifies computation, saves computational cost, and enables simulation of larger circuits. Applicability to the simulation of circuit behavior in a radiation environment is discussed.