DocumentCode :
803527
Title :
Simplified Microcircuit Modeling
Author :
Dickhaut, R.H.
Author_Institution :
Braddock, Dunn and McDonald, Inc. Albuquerque, New Mexico
Volume :
18
Issue :
6
fYear :
1971
Firstpage :
227
Lastpage :
236
Abstract :
The radiation effects modeling reported here reflects a black-box approach to the desired behavior, and does not necessarily bear a direct relationship to the physics of the real processes taking place within the microcircuit when stressed by radiation environments. The gamma dose rate and neutron fluence effects modeling are only representative of radiation effects modeling which could be incorporated into the basic model; and in no sense should they be interpreted as being exhaustive of the radiation effects which need to be modeled, or of the intrinsic capabilities of the model to be easily modified.
Keywords :
Central Processing Unit; Circuit analysis; Circuit simulation; Differential equations; Digital integrated circuits; Diodes; Integrated circuit modeling; Mathematical model; Transient analysis; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1971.4326437
Filename :
4326437
Link To Document :
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