Radiation Response Study of New Radiation-Hardened Low Power TTL Series

The radiation response of the RSN54L series of low power TTL logic circuits was observed after exposure to Flash X-ray, neutron and electron beam environtnents. Several matching types of memory and non-memory SN54L circuits were irradiated in the Flash X-ray environments forming a transient hardness comparison of the hardened and standard low power families. Both DC and switching electrical specification measurements were made on four hundred and eighty (480) RSN54L gate circuits. These terminal measurements served as a monitor for the permanent degradation effects from neutron irradiation. Wide pulse and catastrophic failure tests were run using the electron beam. The RSN54L circuits were found to survive a neutron fluence of 1×1014 n/cm2 (1 MeV equivalent) at full fanout. They sugvived a total dose in the electron beam of 1×108 Rad(Si) and had a transient failure threshold higher than 3×109 Rad(Si)/s.