Title :
A High Gain and Low Supply Voltage LNA for the Direct Conversion Application With 4-KV HBM ESD Protection in 90-nm RF CMOS
Author :
Chang, Chieh-Pin ; Hou, Jian-An ; Su, Jionguang ; Chen, Chih-Wei ; Liou, Tsyr-Shyang ; Wong, Shyh-Chyi ; Wang, Yeong-Her
Author_Institution :
Inst. of Microelectron., Nat. Cheng-Kung Univ., Tainan
Abstract :
A 2.4-GHz low noise amplifier (LNA) for the direct conversion application with high power gain, low supply voltage and plusmn4 KV human body model (HBM) electrostatic discharge (ESD) protection level implemented by a 90-nm RF CMOS technology is demonstrated. At 12.9 mA of current consumption with a supply voltage of 1.0 V, the LNA delivers a power gain of 21.9 dB and the noise figure (NF) of 3.2 dB, while maintaining the input and output return losses below -11 dB and -18.3 dB, respectively. The power gain and NF are only 0.2 dB lower and 0.64 dB higher than those of LNA without ESD protection
Keywords :
CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; electrostatic discharge; low noise amplifiers; 1.0 V; 12.9 mA; 2.4 GHz; 21.9 dB; 3.2 dB; 90 nm; RF CMOS technology; electrostatic discharge protection level; human body model; low noise amplifier; CMOS technology; Electrostatic discharge; High power amplifiers; Low voltage; Low-noise amplifiers; Noise level; Noise measurement; Protection; Radio frequency; Radiofrequency amplifiers; CMOS; electrostatic discharge (ESD); low noise amplifier (LNA); noise figure (NF); radio frequency (RF);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.884911
