JFET Transient Radiation Response

A comprehensive study of transient radiation response mechanisms in Junction Field Effect Transistors at dose rates less than 1 × 1010 Rad (si)/sec has been performed. Theoretical models of device response have been developed and represented in terms of a large signal equivalent circuit model. Experimental verification has been achieved through radiation testing at the AFCRL Linac Facility on specially built JFETs supplied by Siliconix, Inc. The complete results of the work are documented in Reference 1, and the conclusions are presented in this paper.