DocumentCode :
803668
Title :
The plasma extraction transit-time oscillation in bipolar power Devices-Mechanism,EMC effects, and prevention
Author :
Siemieniec, Ralf ; Mourick, Paul ; Netzel, Mario ; Lutz, Josef
Author_Institution :
Infineon Technol. Austria AG, Villach, Austria
Volume :
53
Issue :
2
fYear :
2006
Firstpage :
369
Lastpage :
379
Abstract :
Under certain conditions, radio frequency (RF) oscillations may occur during the turn off of bipolar power devices. These oscillations are related to the plasma extraction transit time (PETT) effect. The mechanism of the oscillation and the complex dependencies for the occurrence of the effect are discussed in this paper. Three-dimensional electromagnetic compatibility (EMC) simulation is used to investigate modifications of the power module layout that shift its resonance point and therefore, effectively suppress the unwanted RF oscillations. EMC measurements and examples of failures of power electronic equipment related to the occurrence of PETT oscillations demonstrate the necessity for suppressing this effect.
Keywords :
electromagnetic compatibility; oscillations; power bipolar transistors; power semiconductor devices; bipolar power devices; bipolar power semiconductor device; electromagnetic compatibility; plasma extraction transit time effect; power electronic equipment; power module layout; radio frequency oscillations; Electromagnetic compatibility; Electromagnetic measurements; Insulated gate bipolar transistors; Multichip modules; Plasma devices; Plasma measurements; Power electronics; Power measurement; Radio frequency; Switches; Bipolar power semiconductor device; electromagnetic compatibility; power module layout; transit-time oscillation;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2005.862705
Filename :
1580876
Link To Document :
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