Title :
Effects of Ionizing Radiation on Thin-Film Semiconductor Devices
Author_Institution :
Northrop Corporate Laboratories Hawthorne, California 90250
Abstract :
Results of an investigation of the transient and permanent effects of ionizing radiation on Al2O3-CdSe thin-film transistors and microcircuits are reported. The total-gamma-dose response of the devices did not differ significantly from that of conventional silicon MOS devices, and the observed shift in threshold voltage is consistent with a positive charge buildup in the gate oxide. In transient response studies, it was found that the thin-film devices will perform without failure up to peak dose rates of ~1010 rads(Si)/s (~30 ns pulsewidth).
Keywords :
Flip-flops; Insulation; Ionizing radiation; Laboratories; Semiconductor devices; Semiconductor thin films; Thin film circuits; Thin film devices; Thin film transistors; Transient response;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1971.4326454