Reduced Recovery Time Semiconductor Optical Amplifier Using p-Type-Doped Multiple Quantum Wells

Author

Zhang, L. ; Kang, I. ; Bhardwaj, A. ; Sauer, N. ; Cabot, S. ; Jaques, J. ; Neilson, D.T.

Author_Institution

Lucent Technol. Bell Labs, Holmdel, NJ

Volume

18

Issue

22

fYear

2006

Firstpage

2323

Lastpage

2325

Abstract

The effect of p-type doping of the active region of multiple quantum-well (MQW) semiconductor optical amplifiers (SOAs) has been studied. Spectrogram measurements of the dynamics of the SOAs reveal that using p-doped barriers for the MQWs has significantly reduced both gain and phase recovery times. 1/e phase recovery times as short as 11 ps were demonstrated using this approach

Keywords

quantum well lasers; semiconductor doping; semiconductor optical amplifiers; 11 ps; gain recovery time; multiple quantum wells; p-doped barriers; p-type doping; p-type-doped quantum wells; phase recovery time; reduced recovery time; semiconductor optical amplifier; spectrogram measurements; Carrier confinement; Charge carrier lifetime; Doping; Indium phosphide; Nonlinear optics; Optical signal processing; Optical wavelength conversion; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission; Nonlinear optics; optical signal processing; semiconductor optical amplifier (SOA); wavelength-division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.882225

Filename

1717529