Defect Annealing of InAs–InAlGaAs Quantum-Dash-in-Asymmetric-Well Laser

Author

Djie, Hery S. ; Wang, Yang ; Ooi, Boon S. ; Wang, Dong-Ning ; Hwang, James C M ; Dang, Gerard T. ; Chang, Wayne H.

Author_Institution

Electr. & Comput. Eng. Dept, Lehigh Univ., Bethlehem, PA

Volume

18

Issue

22

fYear

2006

Firstpage

2329

Lastpage

2331

Abstract

We report the improvement of ~1.62-mum wavelength InAs-InAlGaAs quantum-dash-in-asymmetric-well laser performance using rapid thermal annealing. After the postgrowth annealing at 700 degC for 2 min, the internal quantum efficiency is increased from 90% to 93%, and the linewidth of the laser spectrum and the threshold current density is significantly reduced

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; rapid thermal annealing; 1.62 mum; 2 min; 700 degC; InAs-InAlGaAs; defect annealing; internal quantum efficiency; laser spectrum linewidth; postgrowth annealing; quantum-dash-in-asymmetric-well laser; rapid thermal annealing; threshold current density; Fiber lasers; Indium phosphide; Optical materials; Quantum dot lasers; Quantum dots; Rapid thermal annealing; Substrates; Temperature; Threshold current; Waveguide lasers; Annealing; defect; quantum dash; quantum dots (QDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.885301

Filename

1717531