Radiation Responses of Matched Silicon Junction Field-Effect Transistors

Experimental data on the responses of matched silicon JFET´s subjected to neutron burst, neutron steady-state, and pulsed gamma radiation are presented. Temporary and permanent degradation of device parameters and their change of matching parameters as functions of neutron fluence and ionizing dose rate are discussed. A procedure for selection of matched JFET pairs is suggested. An existing method for calculating the degradation of gm was found to be useful but required a slight modification to fit experimental data.