DocumentCode
803749
Title
Effect of Co60 Gamma Radiation on Noise Parameters of Bipolar Transistors
Author
Prince, J.L. ; Stehlin, R.A.
Author_Institution
Advanced Components Branch Semiconductor Research and Development Laboratory Texas Instruments, Incorporated
Volume
18
Issue
6
fYear
1971
Firstpage
404
Lastpage
409
Abstract
Bipolar-transistor noise current and noise voltage were examined in the range from 100 Hz to 20 kHz as a function of ¿-dose from ¿= 105 Rad)Si) to ¿ = 1.1 × 107 Rad(Si). A variety of geometries of both NPN and PNP types were utilized. Substantial changes in inT were found for all device types but vnT changed in only certain device types.
Keywords
Bipolar transistors; Gamma rays; Geometry; Laboratories; Noise figure; Noise measurement; Research and development; Semiconductor device measurement; Semiconductor device noise; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1971.4326461
Filename
4326461
Link To Document