Title :
Effect of Co60 Gamma Radiation on Noise Parameters of Bipolar Transistors
Author :
Prince, J.L. ; Stehlin, R.A.
Author_Institution :
Advanced Components Branch Semiconductor Research and Development Laboratory Texas Instruments, Incorporated
Abstract :
Bipolar-transistor noise current and noise voltage were examined in the range from 100 Hz to 20 kHz as a function of ¿-dose from ¿= 105 Rad)Si) to ¿ = 1.1 × 107 Rad(Si). A variety of geometries of both NPN and PNP types were utilized. Substantial changes in inT were found for all device types but vnT changed in only certain device types.
Keywords :
Bipolar transistors; Gamma rays; Geometry; Laboratories; Noise figure; Noise measurement; Research and development; Semiconductor device measurement; Semiconductor device noise; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1971.4326461
