DocumentCode :
803761
Title :
Capacitance Voltage Characteristics of Neutron Irradiated n+ pp+ and p+ nn+ Junctions
Author :
Crabbe, James S. ; Ashley, Kenneth L.
Author_Institution :
Texas Instruments Incorporated Dallas, Texas
Volume :
18
Issue :
6
fYear :
1971
Firstpage :
410
Lastpage :
419
Abstract :
The small signal capacitance-voltage characteristics of neutron irradiated p+ nn+ and n+ pp+ diodes are described. The capacitance characteristics were measured at frequencies of 1 kHz, 10 kHz, 100 kHz and 1 MHz for five neutron fluences. A qualitative difference in the effect of neutron fluence on the capacitance characteristics of p+ nn+ and n+ pp+ diodes is described. A computer aided device model which is based on an equivalent circuit representation of two deep defect levels is described. The capacitance characteristics of neutron irradiated pR+ nn+ diodes with three different pre-radiation resistivities were computed using the device model representation of two deep acceptor levels. The computed curves are in good agreement with the measured characteristics.
Keywords :
Capacitance measurement; Capacitance-voltage characteristics; Diodes; Frequency measurement; Neutrons; Resistors; Silicon; Space charge; Testing; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1971.4326462
Filename :
4326462
Link To Document :
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