Title :
Alternating-Current White Thin-Film Light-Emitting Diodes Based on Hydrogenated Amorphous Carbon Layer
Author :
Yeh, Rong-Hwei ; Yu, Tai-Rong ; Lo, Shih-Yung ; Hong, Jyh-Wong
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli
Abstract :
Alternating-current white thin-film light-emitting diodes (ACW-TFLEDs) have been fabricated and demonstrated with composition-graded hydrogenated intrinsic amorphous silicon carbide (i-a-SiC : H) layers. It was found that H2-plasma treatment of luminescent i-a-C : H layer played an important role in decreasing the ACW-TFLED electroluminescence (EL) threshold voltage, increasing the brightness, and broadening the EL spectrum. The EL spectra of the ACW-TFLED under either dc forward or reverse bias, or the sinusoidal alternating-current voltage were qualitatively very similar, with a peak wavelength at about 505 nm and a broad full-width at half maximum (FWHM) about 240 nm. This device revealed a brightness about 800(500)cd/m2 under dc forward (reverse) bias at an injection current density of 600 mA/cm2
Keywords :
amorphous state; carbon; electroluminescence; hydrogenation; light emitting diodes; plasma materials processing; silicon compounds; spectral line broadening; thin film devices; wide band gap semiconductors; 505 nm; H2-plasma treatment; SiC:H; alternating-current light-emitting diodes; amorphous carbon layer; amorphous silicon carbide; brightness; composition-graded; electroluminescence; hydrogenated carbon layer; hydrogenated silicon carbide; injection current density; intrinsic silicon carbide; luminescent layer; spectrum broadening; thin-film light-emitting diodes; white light-emitting diodes; Amorphous materials; Brightness; Diamond-like carbon; Electroluminescence; Light emitting diodes; Polymer films; Semiconductor films; Substrates; Threshold voltage; Transistors; Alternating-current; hydrogenated amorphous carbon; white light;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.885219
