DocumentCode :
803781
Title :
Permanent Neutron Damage in PIN Microwave Diode Switches
Author :
Chaffin, R.J.
Author_Institution :
Sandia Laboratories Albuquerque, New Mexico 87115
Volume :
18
Issue :
6
fYear :
1971
Firstpage :
429
Lastpage :
435
Abstract :
The microwave PiN diode and its associated circuitry have been studied both experimentally and theoretically. The results of the study show that microwave PIN switches are very susceptible to permanent neutron damage. The failure mechanism is a severe reduction of conductivity modulation in the diode´s I region caused by a reduction of carrier lifetime. This loss of conductivity modulation not only causes a reduction of the isolation abilities of a microwave switch but is also shown to lead to other secondary failure modes which can be extremely important.
Keywords :
Contact resistance; Diodes; Frequency; Impedance; Inductance; Neodymium; Neutrons; Packaging; Parasitic capacitance; Switches;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1971.4326464
Filename :
4326464
Link To Document :
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