Enhanced Light Extraction in GaInN Light-Emitting Diode With Pyramid Reflector

Author

Xi, J.-Q. ; Luo, Hong ; Pasquale, Alyssa J. ; Kim, Jong Kyu ; Schubert, E.Fred

Author_Institution

Dept. of Phys, Appl. Phys. & Astron., Rensselaer Polytech. Inst., Troy, NY

Volume

18

Issue

22

fYear

2006

Firstpage

2347

Lastpage

2349

Abstract

GaInN light-emitting diodes (LEDs) that employ a reflector consisting of an array of three-dimensional (3-D) SiO₂ pyramids and a Ag layer are demonstrated to have enhanced light extraction compared with GaInN LEDs with planar Ag reflector. Ray tracing simulations reveal that the pyramid reflector provides 14.1% enhancement in extraction efficiency. Consistent with the simulation, it is experimentally demonstrated that GaInN LEDs with the pyramid reflector show 13.9% higher light output than LEDs with a planar Ag reflector. The enhancement is attributed to the appearance of an additional escape cone for light extraction enabled by the 3-D pyramid reflector

Keywords

III-V semiconductors; gallium compounds; indium compounds; integrated optics; light emitting diodes; mirrors; ray tracing; silicon compounds; silver; GaInN; GaInN light-emitting diode; SiO₂-Ag; escape cone; light extraction; planar Ag reflector; pyramid reflector; ray tracing; three-dimensional SiO₂ pyramids; Helium; Light emitting diodes; Optical arrays; Optical devices; Optical propagation; Optical surface waves; Physics; Ray tracing; Rough surfaces; Semiconductor diodes; GaN; light extraction; light-emitting diode (LED); reflector;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.885210

Filename

1717537