Title :
Implementation of switch network logic in SOI
Author :
Rajsuman, Rochit
Author_Institution :
Dept. of Comput. Eng. & Sci., Case Western Reserve Univ., Cleveland, OH, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
Implementation of switch network logic (SNL) in silicon-on-insulator (SOI) technology is examined. The effect of substrate connection is considered in order to examine the behavior of MOSFET as a switch. A situation that causes an extremely high leakage current through the substrate is discussed. This large current through the substrate restricts the switch-level modeling for SOI MOSFETs and hence the SNL implementation. A simple procedure is presented that provides an optimized design for SOI implementation
Keywords :
MOS integrated circuits; insulated gate field effect transistors; integrated logic circuits; MOSFET; SNL implementation; SOI; leakage current; silicon-on-insulator; substrate connection; switch network logic; switch-level modeling; Design optimization; Intelligent networks; Leakage current; Logic circuits; MOS devices; MOSFET circuits; Silicon on insulator technology; Switches; Switching circuits; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
