Title :
Characterization of a 14 in × 17 in flat panel detector based on ion shower doped a-Si : H P-I-N diodes
Author :
Kim, Hee Joon ; Cho, Gyuseong
Author_Institution :
Nucl. & Quantum Eng. Dept., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea
Abstract :
In recent years, it has become technically and economically feasible to use solid-state detector technology to display, store and transfer X-ray images. In this paper, we report the performance of a 33 cm × 41 cm amorphous silicon flat panel detector (FPD) based on an ion shower doped P-I-N photodiode/thin-film transistor (TFT) array. The p-layer of a diode is formed by an ion shower doping method instead of the conventional plasma-enhanced chemical vapor deposition method. Measurements of X-ray imaging performances are reported for general imaging metrics such as modulation transfer function, noise power spectrum and detective quantum efficiency. The presampling MTF was found to be 0.51 and 0.26 at 1 lp/mm and 2 lp/mm. The measured DQE at 1 lp/mm and 2 lp/mm was 0.35 and 0.17.
Keywords :
p-i-n photodiodes; silicon radiation detectors; thin film transistors; P-I-N diodes; Si; a-Si; ion shower; modulation transfer function; noise power spectrum; p-layer; quantum efficiency; thin-film transistor; Amorphous silicon; Flat panel displays; P-i-n diodes; Plasma measurements; Power generation economics; Solid state circuits; Thin film transistors; X-ray detection; X-ray detectors; X-ray imaging;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.817410
