Title :
PCD Lifetime Measurements as a Function of Temperature in Detector Grade and Impurity Doped Germaniui
Author :
Schoenmaekers, W.K. ; Van Ouytsel, J.I. ; De Laet, L.H.
Author_Institution :
Metallurgie Hoboken-Overpelt, Olen-Belgium
Abstract :
It is shown, theoretically and experimentally, that PCD lifetime measurements, as a function of temperature in p-Ge, may be used to determine the concentration, the trap energy and capture cross sections for electrons, of single and multilevel impurities.
Keywords :
Crystals; Detectors; Electron traps; Energy capture; Impurities; Lifetime estimation; Nonlinear equations; Solids; Spontaneous emission; Temperature distribution;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1972.4326522
