DocumentCode :
804413
Title :
Lithiun Driftability and Precipitation in Silicon
Author :
Guislain, H.J. ; De Laet, L.H.
Author_Institution :
Metallurgie Hoboken-Overpelt, Olen-Belgiun
Volume :
19
Issue :
1
fYear :
1972
Firstpage :
323
Lastpage :
328
Abstract :
Lithium mobility and precipitation were correlated with other electrical and IR-optical measurements on dislocation free crystals grown under special conditions in order to avoid vacancy clustering. It is shown that the classical expression of Pell, to derive the oxygen content, is no longer applicable to those crystals. The influence of annealing on the Li diffusion constant shows that vacancy supersaturation poisons these crystals or that the role of the different oxygen-configurations has to be reviewed.
Keywords :
Annealing; Copper; Crystals; Detectors; Electric variables measurement; Equations; Lithium; Silicon; Spirals; Toxicology;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1972.4326526
Filename :
4326526
Link To Document :
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