Title :
Metal-Oxide-Semiconductor X-Ray Detectors
Author :
Ciarlo, D.R. ; Kalibjian, R. ; Mayeda, K. ; Boster, T.A.
Author_Institution :
Lawrence Livermore Laboratory, University of California Livermore, California 94550
Abstract :
Metal-oxide-semiconductor (MOS) devices have been used for detecting low-energy (2 to 20 keV) x rays for incident fluences of 10-4 to 10-1 cal/cm2 (or dosage in the device of 103 to 106 rads) in a bent-crystal spectrometer application. An attractive feature of the detector is that the three functions of 1) detection, 2) memory, and 3) readout are integrated into one semiconductor chip.
Keywords :
Aluminum; Capacitance; Capacitance-voltage characteristics; Channel bank filters; Electrons; Ionizing radiation; Radiation effects; Silicon; Voltage; X-ray detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1972.4326531