Temperature-dependent characteristics and single-mode performance of AlGaInP-based 670-690-nm vertical-cavity surface-emitting lasers

Author

Crawford, M.H. ; Schneider, R.P., Jr. ; Choquette, K.D. ; Lear, K.L.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

7

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

724

Lastpage

726

Abstract

We report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, we demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50/spl deg/C from a 15-μm-diameter device.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; laser modes; semiconductor lasers; surface emitting lasers; 1.5 mW; 1.9 mW; 11 percent; 15 mum; 50 C; 670 to 690 nm; 8.2 mW; 9.6 percent; AlGaInP vertical-cavity surface-emitting lasers; AlGaInP-GaAs; GaAs; gain peak cavity mode overlap; light output I-V characteristics; light output power current characteristics; maximum output power; multimode operation; one-wave cavity planar implanted lasers; power conversion efficiency; single mode performance; temperature dependent characteristics; threshold current; Carbon dioxide; Laser modes; Optical attenuators; Optical surface waves; Plastics; Power generation; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.393186

Filename

393186