Title :
Voltage drop in n- and p-type Bragg reflectors for vertical-cavity surface-emitting lasers
Author :
Nabiev, R.F. ; Chang-Hasnain, C.J.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
fDate :
7/1/1995 12:00:00 AM
Abstract :
An analysis of carrier transport in n- and p-type distributed Bragg reflectors (DBR) of vertical-cavity surface-emitting lasers that consist of stacks of quarter-wave GaAs-AlAs layers is presented. The analysis is based on the diffusion-drift approximation with the thermionic boundary conditions at heterojunction interfaces. The spatial distribution of carrier effective masses and mobilities has been taken into account. While the voltage drop in n-type DBR is determined mostly by thermionic emission at the interfaces, the drift-diffusion component of the voltage drop is comparable with the thermionic emission in p-type DBR. We present the calculated resistance as a function of graded-region thicknesses and doping levels, which can be useful for low-resistive DBR design.<>
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; contact potential; contact resistance; distributed Bragg reflector lasers; gallium arsenide; laser mirrors; semiconductor lasers; surface emitting lasers; AlAs-Al/sub 0.7/Ga/sub 0.3/As; GaAs-AlAs; carrier effective mass spatial distribution; carrier mobility spatial distribution; carrier transport; diffusion-drift approximation; doping levels; graded-region thicknesses; heterojunction interfaces; low-resistive DBR design; n-type distributed Bragg reflectors; p-type distributed Bragg reflectors; quarter-wave GaAs-AlAs layer stacks; specific interface resistance; thermionic boundary conditions; vertical-cavity surface-emitting lasers; voltage drop; Boundary conditions; Distributed Bragg reflectors; Effective mass; Free electron lasers; Poisson equations; Surface emitting lasers; Surface resistance; Thermionic emission; Vertical cavity surface emitting lasers; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
