Calculation of differential gain and linewidth enhancement factor in 980-nm InGaAs vertical cavity surface-emitting lasers

Author

Summers, H.D. ; Dowd, P. ; White, I.H. ; Tan, M.R.T.

Author_Institution

Sch. of Phys., Bath Univ., UK

Volume

7

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

736

Lastpage

738

Abstract

The optimization of differential gain and linewidth enhancement factor within VCSEL´s is required to achieve improved performance under dynamic conditions. In this paper, the differential gain and linewidth enhancement factor in an InGaAs-GaAs VCSEL have been calculated over a range of carrier densities and at various wavelengths across the gain spectrum. The results show the importance of low threshold gain values in achieving high differential gain/low linewidth enhancement factor. By temperature tuning the lasing wavelength to shorter wavelengths than the gain peak, values of /spl alpha//sub H/ as low as 0.6 can be achieved.<>

Keywords

III-V semiconductors; carrier density; gallium arsenide; indium compounds; laser theory; laser transitions; laser tuning; quantum well lasers; semiconductor device models; spectral line breadth; surface emitting lasers; 980 nm; InGaAs quantum well; InGaAs vertical cavity surface-emitting lasers; InGaAs-GaAs; InGaAs-GaAs VCSEL; VCSEL; carrier densities; differential gain; dynamic conditions; gain peak; gain spectrum; improved performance; linewidth enhancement factor; low threshold gain values; temperature tuning; wavelengths; Capacitive sensors; Charge carrier density; Indium gallium arsenide; Laser mode locking; Laser tuning; Optical surface waves; Performance gain; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.393190

Filename

393190