Title :
Proposal and demonstration of a symmetrical npipn electroabsorption modulator
Author :
Devaux, F. ; Harmand, J.C. ; Bouadma, N. ; Carré, M. ; Huet, F.
Author_Institution :
France Telecom, Bagneux, France
fDate :
7/1/1995 12:00:00 AM
Abstract :
We propose a new type of electroabsorption modulator based on a npipn diode structure. Its transmission curve versus applied bias should be symmetrical with respect to zero bias. A npipn InGaAs-InAlAs multiple-quantum-well (MQW) modulator has been fabricated to experimentally demonstrate two applications for optical fiber transmission systems: pulse generation with adjustable duty cycle for optical time division multiplexing and harmonic generation up to 40 GHz for millimeter radiowave transport on optical fiber.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; harmonic generation; indium compounds; optical communication equipment; optical fibre communication; semiconductor diodes; semiconductor quantum wells; time division multiplexing; 40 GHz; InGaAs-InAlAs; adjustable duty cycle; applied bias; harmonic generation; millimeter radiowave transport; multiple-quantum-well; npipn InGaAs-InAlAs MQW modulator; npipn diode structure; optical fiber; optical fiber transmission systems; optical time division multiplexing; pulse generation; symmetrical npipn electroabsorption modulator; transmission curve; zero bias; Diodes; Optical fibers; Optical harmonic generation; Optical modulation; Optical pulse generation; Proposals; Pulse generation; Pulse modulation; Quantum well devices; Time division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
