A pixellated grating array using photoelectrochemical etching on a GaAs waveguide

Author

Twyford, E.J. ; Jokerst, N.M. ; Kohl, P.A. ; Tayag, T.J.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

7

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

766

Lastpage

768

Abstract

We have demonstrated and evaluated a grating array outcoupler fabricated by photoelectrochemical (PEC) etching, a manufacturable and practical approach for fabrication of grating-based III-V semiconductor waveguide devices. An array of submicron period gratings was etched into photolithographically delineated areas in a single PEC step. The fabricated devices are: 10-μm wide rib waveguides with 0.35-μm first-order outcoupling gratings; and 10-μm wide rib waveguides with 10 μm×10 μm pixellated areas of gratings. Device characterization demonstrates the effectiveness of outcoupling grating fabrication using PEC and that the pixellated grating outcoupler is an effective and simple means of generating an optical beam array.

Keywords

III-V semiconductors; arrays; diffraction gratings; etching; gallium arsenide; integrated optics; optical couplers; optical fabrication; optical waveguides; photoelectrochemistry; rib waveguides; 0.35 micron; GaAs; GaAs waveguide; III-V semiconductor; fabrication; optical beam array; outcoupler; photoelectrochemical etching; photolithography; pixellated grating array; rib waveguides; Arrayed waveguide gratings; Character generation; Etching; III-V semiconductor materials; Optical arrays; Optical beams; Optical device fabrication; Optical waveguides; Semiconductor device manufacture; Semiconductor waveguides;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.393199

Filename

393199