Fabrication of low-temperature PECVD channel waveguides with significantly improved loss in the 1.50-1.55-μm wavelength range

Author

Bazylenko, M.V. ; Gross, M. ; Allen, P.M. ; Chu, P.L.

Author_Institution

Sch. of Electr. Eng., New South Wales Univ., Sydney, NSW, Australia

Volume

7

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

774

Lastpage

776

Abstract

By excluding nitrogen-containing gases from the deposition process, silica-based waveguides have been fabricated by PECVD at low temperature with a propagation loss less than 0.2 dB/cm in the 1.50-1.55-μm wavelength range. PECVD is performed in a high-plasma-density hollow cathode system from a mixture of oxygen and silane. Carbon tetrafluoride is used as a fluorine dopant to depress the refractive index in the buffer and cladding layers. A controllable refractive index change in the range 0.004-0.02 can be obtained.

Keywords

integrated optics; optical fabrication; optical losses; optical waveguides; plasma CVD; refractive index; 1.50 to 1.55 micron; SiO/sub 2/:F; buffer layers; carbon tetrafluoride; channel waveguides; cladding layers; fabrication; fluorine dopant; high-plasma-density hollow cathode; low-temperature PECVD; oxygen-silane mixture; propagation loss; refractive index; silica; Optical buffering; Optical device fabrication; Optical films; Optical refraction; Optical waveguides; Propagation losses; Refractive index; Semiconductor waveguides; Silicon compounds; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.393202

Filename

393202